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IRFU9024N Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRFU9024N
Descrição Electrónicos  Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFU9024N Folha de dados(HTML) 2 Page - International Rectifier

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IRFR/U9024N
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.6
V
TJ = 25°C, IS = -7.2A, VGS = 0V
„
trr
Reverse Recovery Time
–––
47
71
ns
TJ = 25°C, IF = -7.2A
Qrr
Reverse Recovery Charge
–––
84
130
nC
di/dt = 100A/µs
„†
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
-11
-44
A
Notes:
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
‚ Starting T
J = 25°C, L = 2.8mH
RG = 25Ω, IAS = -6.6A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ -6.6A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
-0.05 –––
V/°C
Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.175
VGS = -10V, ID = -6.6A
„
VGS(th)
Gate Threshold Voltage
-2.0
–––
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
2.5
–––
–––
S
VDS = -25V, ID = -7.2A
†
–––
–––
-25
µA
VDS = -55V, VGS = 0V
–––
–––
-250
VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
19
ID = -7.2A
Qgs
Gate-to-Source Charge
–––
–––
5.1
nC
VDS = -44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
10
VGS = -10V, See Fig. 6 and 13
„†
td(on)
Turn-On Delay Time
–––
13
–––
VDD = -28V
tr
Rise Time
–––
55
–––
ID = -7.2A
td(off)
Turn-Off Delay Time
–––
23
–––
RG = 24
tf
Fall Time
–––
37
–––
RD = 3.7Ω, See Fig. 10
„†
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
…
Ciss
Input Capacitance
–––
350
–––
VGS = 0V
Coss
Output Capacitance
–––
170
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
92
–––
ƒ = 1.0MHz, See Fig. 5
†
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
† Uses IRF9Z24N data and test conditions.


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