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IRFZ24N Folha de dados(PDF) 1 Page - International Rectifier |
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IRFZ24N Folha de dados(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET IRFZ24N Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description 9/13/99 VDSS = 55V RDS(on) = 0.07Ω ID = 17A S D G TO-220AB Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 3.3 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W RθJA Junction-to-Ambient –––– –––– 62 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 68 PD @TC = 25°C Power Dissipation 45 W Linear Derating Factor 0.30 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 71 mJ IAR Avalanche Current 10 A EAR Repetitive Avalanche Energy 4.5 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings www.irf.com 1 PD - 91354A |
Nº de peça semelhante - IRFZ24N |
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Descrição semelhante - IRFZ24N |
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