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2SJ248 Folha de dados(PDF) 6 Page - Renesas Technology Corp |
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2SJ248 Folha de dados(HTML) 6 Page - Renesas Technology Corp |
6 / 9 page 2SJ248 Rev.2.00 Sep 07, 2005 page 4 of 6 1.0 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.2 0.4 0.6 0.8 Static Drain to Source on State Resistance vs. Temperature Pulse Test –10 V VGS = –4 V ID = –10 A –10 A –5 A –2 A –2 A, –5 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 50 20 5 10 2 0.5 1 –0.1 –0.2 –0.5 –2 –1 –5 –10 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.2 –0.5 –1 –2 –5 –10 –20 500 200 100 20 50 10 5 di / dt = 50 A / µs VGS = 0 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 30 10 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –100 –80 –60 –40 –20 Dynamic Input Characteristics 10 20 30 40 40 VDS VGS ID = –8 A 500 200 100 20 50 10 5 –0.2 –0.5 –1 –2 –5 –10 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V VGS = –10 V, VDD = –30 V PW = 2 µs, duty ≤ 1 % |
Nº de peça semelhante - 2SJ248_15 |
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Descrição semelhante - 2SJ248_15 |
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