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1N4150 Folha de dados(PDF) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
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1N4150 Folha de dados(HTML) 1 Page - SHENZHEN YONGERJIA INDUSTRY CO.,LTD |
1 / 3 page WEJ ELECTRONIC CO.,LTD High-speed switching diode Features 1. High reliability 2. High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage VRRM 50 V Reverse voltage VR 40 V Peak forward surge current tp=1μs IFSM 4 A Forward current IF 600 mA Average forward current VR=0 IFAV 300 mA Power dissipation PV 500 mW Junction temperature Tj 175 ℃ Storage temperature range Tstg -65~+175 ℃ Maximum Thermal Resistance Tj=25℃ Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mm×50mm×1.6mm RthJA 500 K/W 1N4150 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS |
Nº de peça semelhante - 1N4150_15 |
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Descrição semelhante - 1N4150_15 |
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