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LDTC144GET1G Folha de dados(PDF) 1 Page - Leshan Radio Company

Nome de Peças LDTC144GET1G
Descrição Electrónicos  ias Resistor Transistor
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Fabricante Electrônico  LRC [Leshan Radio Company]
Página de início  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LDTC144GET1G Folha de dados(HTML) 1 Page - Leshan Radio Company

  LDTC144GET1G_15 Datasheet HTML 1Page - Leshan Radio Company LDTC144GET1G_15 Datasheet HTML 2Page - Leshan Radio Company LDTC144GET1G_15 Datasheet HTML 3Page - Leshan Radio Company  
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Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
L1
_
47
3000/Tape & Reel
LESHAN RADIO COMPANY, LTD.
1/3
10000/Tape & Reel
We declare that the material of product compliance with
RoHS requirements.
LDTC144GET1G
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Inverter, Interface, Driver
Features
Applications
LDTC144GET1G
LDTC144GET3G
L1
47
Absolute maximum ratings (Ta=25
°C)
Electrical characteristics (Ta=25
°C)
3
COLLECTOR
2
EMITTER
1
BASE
R1
R2
1
2
3
SC-89
_
Parameter
Symbol
Pc
Tj
Tstg
Limits
50
50
5
100
150
200
300
DTC144GE
DTC144GUA / DTC144GKA
DTC144GSA
150
−55 to +150
Unit
V
V
V
mA
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
Power
dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
C
C
Symbol
Min.
Typ.
Max.
Unit
Conditions
50
50
5
65
68
32.9
250
47
0.5
130
0.3
61.1
V
V
V
µA
µA
V
MHz
k
IC
=50µA
IC
=1mA
IE
=160µA
VCB
=50V
VEB
=4V
IC
=10mA , IB=0.5mA
IC
=5mA , VCE=5V
VCE
=10V , IE= −5mA , f=100MHz
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Emitter-base resistance
Transition frequency of the device.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
R


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