NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: F00165H

DOC

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

DESIGNER’S DATA SHEET

Part Number / Ordering Information

1/

SFF27N50 ___ ___ ___

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│

│

│

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│

│

│

│

└

│

│

│

│

│

└

└

__ = Not Screened

TX = TX Level

TXV = TXV Level

S = S Level

__ = Straight Leads

DB = Down Bend

UB = Up Bend

M = TO-254

Z = TO-254Z

SFF27N50M

SFF27N50Z

27 AMP , 500 Volts, 175 mΩ

Avalanche Rated N-channel

MOSFET

Features:



Rugged poly-Si gate



Lowest ON-resistance in the industry



Avalanche rated



Hermetically Sealed, Isolated Package



Low Total Gate Charge



Fast Switching



TX, TXV, S-Level screening available



Maximum Ratings

Symbol

Value

Units

Drain - Source Voltage

500

V

Gate – Source Voltage

continuous

transient

±20

±30

V

Max. Continuous Drain Current (package

limited)

27

A

Max. Instantaneous Drain Current (Tj limited)

27

18

A

Max. Avalanche current

@ L= 0.1 mH

35

A

Single and Repetitive Avalanche Energy

@ L= 0.1 mH

1500

50

mJ

Total Power Dissipation

100

W

Operating & Storage Temperature

-55 to +150

ºC

Maximum Thermal Resistance

(Junction to Case)

1.0

(typ.0.75)

ºC /W

NOTES:

TO-254

TO-254Z

*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available

on request.

3/ For package outlines / lead bending options / pinout

configurations - contact factory.

4/ Maximum current limited by package configuration

5/ Unless otherwise specified, all electrical characteristics @25