SI1499DH_15 datasheet(1/12 Pages) VISHAY

Nome de Peças	SI1499DH

Descrição Electrónicos	P-Channel 1.2 V (G-S) MOSFET

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Vishay Siliconix

Si1499DH

Document Number: 73338

S10-0792-Rev. F, 05-Apr-10

www.vishay.com

1

P-Channel 1.2 V (G-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

Ultra-Low On-Resistance

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch for Portable Devices

- Guaranteed Operation at VGS = 1.2 V

Critical for Optimized Design and Longer Battery Life

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

c

Qg (Typ.)

- 8

0.078 at VGS = - 4.5 V

- 1.6

10.5 nC

0.095 at VGS = - 2.5 V

- 1.6

0.115 at VGS = - 1.8 V

- 1.6

0.153 at VGS = - 1.5 V

- 1.6

0.424 at VGS = - 1.2 V

- 1.6b

Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)

Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free)

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

Marking Code

BI

XX

Lot Traceability

and Date Code

Part #

Code

S

G

D

P-Channel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Package limited.

d. Maximum under steady state conditions is 125 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 8

V

Gate-Source Voltage

VGS

± 5

Continuous Drain Current (TJ = 150 °C)

a, b

TC = 25 °C

ID

-1.6c

A

TC = 70 °C

- 1.6c

TA = 25 °C

- 1.6a, b, c

TA = 70 °C

- 1.6a, b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 6.5c

Continuous Source-Drain Diode Currenta, b

TC = 25 °C

IS

- 1.6c

TA = 25 °C

- 1.3a, b

Maximum Power Dissipationa, b

TC = 25 °C

PD

2.78

W

TC = 70 °C

1.78

TA = 25 °C

2.5a, b

TA = 70 °C

1a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, d

t

≤ 5 s

RthJA

60

80

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

34

45

Nº de peça semelhante - SI1499DH_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI1499DH-T1-E3	106Kb / 6P	P-Channel 1.2-V (G-S) MOSFET S-80579-Rev. E, 17-Mar-08
VBsemi Electronics Co.,...	SI1499DH-T1-GE3	1Mb / 9P	P-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI1499DH	106Kb / 6P	P-Channel 1.2-V (G-S) MOSFET S-80579-Rev. E, 17-Mar-08
Vishay Siliconix	SI1499DH	252Kb / 11P	P-Channel 1.2 V (G-S) MOSFET 01-Jan-2022

More results

Descrição semelhante - SI1499DH_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SIB417EDK	218Kb / 9P	P-Channel 1.2-V (G-S) MOSFET Rev. B, 10-Aug-09
	SI1499DH	106Kb / 6P	P-Channel 1.2-V (G-S) MOSFET Rev. C, 09-Oct-06
	SI8429DB-T1-E1	215Kb / 11P	P-Channel 1.2 V (G-S) MOSFET Rev.D, 19-Aug-13
	SI1499DH	106Kb / 6P	P-Channel 1.2-V (G-S) MOSFET S-80579-Rev. E, 17-Mar-08
	SIB417DK	146Kb / 7P	P-Channel 1.2-V (G-S) MOSFET Rev. D, 26-May-08
	SIB417AEDK	238Kb / 9P	P-Channel 1.2 V (G-S) MOSFET Rev. A, 01-Oct-12
	SI1499DH	252Kb / 11P	P-Channel 1.2 V (G-S) MOSFET 01-Jan-2022
	SI8429DB	240Kb / 10P	P-Channel 1.2 V (G-S) MOSFET 01-Jan-2022
	SIB417EDK	217Kb / 9P	P-Channel 1.2-V (G-S) MOSFET 01-Jan-2022
	SIB414DK	154Kb / 7P	N-Channel 1.2-V (G-S) MOSFET Rev. C, 10-Mar-08

More results

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