Os motores de busca de Datasheet de Componentes eletrônicos |
|
SI2319CDS Folha de dados(PDF) 4 Page - Vishay Siliconix |
|
SI2319CDS Folha de dados(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 66709 S10-1286-Rev. A, 31-May-10 Vishay Siliconix Si2319CDS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0 0.5 1.0 V SD - Source-to-Drain Voltage (V) TJ =25 °C TJ = 150 °C 1.4 1.6 1.8 2.0 2.2 2.4 - 50 - 25 0 25 50 75 100 125 150 ID = - 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.05 0.10 0.15 0.20 0.25 246 8 10 TJ =25 °C TJ = 125 °C ID =- 3.1 A V GS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 Time (s) TA = 25 °C Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 1s,10s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
Nº de peça semelhante - SI2319CDS_15 |
|
Descrição semelhante - SI2319CDS_15 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |