SI7115DN_15 datasheet(10/14 Pages) VISHAY

Nome de Peças	SI7115DN

Descrição Electrónicos	P-Channel 150 V (D-S) MOSFET

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Vishay Siliconix

AN822

Document Number 71681

03-Mar-06

www.vishay.com

3

THERMAL PERFORMANCE

Introduction

A basic measure of a device’s thermal performance is

the junction-to-case thermal resistance, R

θjc, or the

junction to- foot thermal resistance, R

θjf. This parameter

is measured for the device mounted to an infinite heat

sink and is therefore a characterization of the device

only, in other words, independent of the properties of the

object to which the device is mounted. Table 1 shows a

comparison of the PowerPAK 1212-8, PowerPAK SO-8,

standard TSSOP-8 and SO-8 equivalent steady state

performance.

By minimizing the junction-to-foot thermal resistance, the

MOSFET die temperature is very close to the tempera-

ture of the PC board. Consider four devices mounted on

a PC board with a board temperature of 45 °C (Figure 4).

Suppose each device is dissipating 2 W. Using the junc-

tion-to-foot thermal resistance characteristics of the

PowerPAK 1212-8 and the other SMT packages, die

temperatures are determined to be 49.8 °C for the Pow-

erPAK 1212-8, 85 °C for the standard SO-8, 149 °C for

standard TSSOP-8, and 125 °C for TSOP-6. This is a

4.8 °C rise above the board temperature for the Power-

PAK 1212-8, and over 40 °C for other SMT packages. A

4.8 °C rise has minimal effect on rDS(ON) whereas a rise

of over 40 °C will cause an increase in rDS(ON) as high

as 20 %.

Spreading Copper

Designers add additional copper, spreading copper, to

the drain pad to aid in conducting heat from a device. It

is helpful to have some information about the thermal

performance for a given area of spreading copper.

Figure 5 and Figure 6 show the thermal resistance of a

PowerPAK 1212-8 single and dual devices mounted on

a 2-in. x 2-in., four-layer FR-4 PC boards. The two inter-

nal layers and the backside layer are solid copper. The

internal layers were chosen as solid copper to model the

large power and ground planes common in many appli-

cations. The top layer was cut back to a smaller area and

at each step junction-to-ambient thermal resistance

measurements were taken. The results indicate that an

area above 0.2 to 0.3 square inches of spreading copper

gives no additional thermal performance improvement.

A subsequent experiment was run where the copper on

the back-side was reduced, first to 50 % in stripes to

mimic circuit traces, and then totally removed. No signif-

icant effect was observed.

TABLE 1: EQIVALENT STEADY STATE PERFORMANCE

Package

SO-8

TSSOP-8

TSOP-8

PPAK 1212

PPAK SO-8

Configuration

Single

Dual

Single

Dual

Single

Dual

Single

Dual

Single

Dual

Thermal Resiatance RthJC(C/W)

20

40

52

83

40

90

2.4

5.5

1.8

5.5

Figure 4. Temperature of Devices on a PC Board

2.4 °C/W

49.8 °C

PowerPAK 1212

20 °C/W

85 °C

Standard SO-8

PC Board at 45 °C

52 °C/W

149 °C

Standard TSSOP-8

40 °C/W

125 °C

TSOP-6

Nº de peça semelhante - SI7115DN_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI7115DN-T1-GE3	552Kb / 13P	P-Channel 150 V (D-S) MOSFET Rev. C, 26-Sep-11
Vishay Siliconix	SI7115DN	547Kb / 13P	P-Channel 150 V (D-S) MOSFET 01-Jan-2022

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Descrição semelhante - SI7115DN_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Analog Power	AM10P15-550D	322Kb / 5P	P-Channel 150-V (D-S) MOSFET
Vishay Siliconix	SI4409DY	196Kb / 4P	P-Channel 150-V (D-S) MOSFET Rev. A, 16-Jul-07
Vishay Siliconix	SI7117DN-T1-GE3	561Kb / 13P	P-Channel 150 V (D-S) MOSFET Rev. C, 11-Apr-11
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	SI7439DP	375Kb / 12P	P-Channel 150 V (D-S) MOSFET 01-Jan-2022
	SI4455DY	140Kb / 4P	P-Channel 150-V (D-S) MOSFET Rev. A, 18-Aug-08
	SI2325DS	89Kb / 6P	P-Channel 150-V (D-S) MOSFET S-42449-Rev. A, 10-Jan-05
Analog Power	AM90P15-30P	339Kb / 5P	P-Channel 150-V (D-S) MOSFET
Analog Power	AM90P15-60P	343Kb / 5P	P-Channel 150-V (D-S) MOSFET
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