SIZ342DT datasheet(2/11 Pages) VISHAY

Nome de Peças	SIZ342DT

Descrição Electrónicos	Dual N-Channel 30 V (D-S) MOSFET

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SiZ342DT

www.vishay.com

Vishay Siliconix

S15-0031-Rev. B, 19-Jan-15

2

Document Number: 62949

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 69 °C/W.

THERMAL RESISTANCE RATINGS

PARAMETER

CHANNEL-1 AND CHANNEL-2

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient a, b

t

≤ 10 s

RthJA

27

34

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

67.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

CHANNEL-1 AND CHANNEL-2

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

30

-

V

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 μA

-

20

-

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = 250 μA

-

-5.6

-

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.2

-

2.4

V

Gate Source Leakage

IGSS

VDS =0 V, VGS = +20 V/ -16 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

-

1

μA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

-

5

On-State Drain Current b

ID(on)

VDS

≤ 5 V,VGS = 10 V

10

-

A

Drain-Source On-State Resistance b

RDS(on)

VGS = 10 V, ID = 14.4 A

-

0.0084

0.0115

Ω

VGS = 4.5 V, ID = 13 A

-

0.0111

0.0153

Forward Transconductance b

gfs

VDS = 15 V, ID = 14.4 A

-

37

-

S

Dynamic a

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

-

650

-

pF

Output Capacitance

Coss

-

236

-

Reverse Transfer Capacitance

Crss

-20

-

Crss / Ciss Ratio

0.03

-

0.06

-

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 14.4 A

-

10

20

nC

VDS = 15 V,VGS = 4.5 V, ID = 14.4 A

-4.5

9

Gate-Source Charge

Qgs

-2.1

-

Gate-Drain Charge

Qgd

-0.7

-

Output Charge

Qoss

-6.6

-

Gate Resistance

Rg

f = 1 MHz

0.3

1.4

2.8

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5

Ω

ID

≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

-15

23

ns

Rise Time

tr

-50

75

Turn-Off Delay Time

td(off)

-16

24

Fall Time

tf

-10

20

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5

Ω

ID

≅ 10 A, VGEN = 10 V, Rg = 1 Ω

-8

16

Rise Time

tr

-15

23

Turn-Off Delay Time

td(off)

-17

26

Fall Time

tf

-7

14

Nº de peça semelhante - SIZ342DT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Telefunken	SIZ342DT	1Mb / 10P	Dual N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SIZ342DT	326Kb / 10P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SIZ342DT	326Kb / 10P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022

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Descrição semelhante - SIZ342DT

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

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SIZ342DT Folha de dados(PDF) 2 Page - Vishay Siliconix

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