VS-ST730CL Series

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Vishay Semiconductors

Revision: 15-Apr-14

3

Document Number: 94414

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Typ.

Max.

Maximum peak gate power

≤ 5 ms

10.0

W

Maximum average gate power

2.0

Maximum peak positive gate current

≤ 5 ms

3.0

A

Maximum peak positive gate voltage

≤ 5 ms

20

V

Maximum peak negative gate voltage

5.0

DC gate current required to trigger

Maximum required gate

trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

200

-

mA

100

200

50

-

DC gate voltage required to trigger

2.5

-

V

1.8

3.0

1.1

-

DC gate current not to trigger

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

cathode applied

10

mA

DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction temperature range

-40 to 125

°C

Maximum storage temperature range

-40 to 150

Maximum thermal resistance, junction to heatsink

DC operation single side cooled

0.073

K/W

DC operation double side cooled

0.031

Maximum thermal resistance, case to heatsink

DC operation single side cooled

0.011

DC operation double side cooled

0.006

Mounting force, ± 10 %

14 700

(1500)

N

(kg)

Approximate weight

255

g

Case style

See dimensions - link at the end of datasheet

TO-200AC (B-PUK)

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

SINGLE SIDE DOUBLE SIDE SINGLE SIDE

DOUBLE SIDE

180°

0.009

0.009

0.006

0.006

K/W

120°

0.011

0.011

0.010

0.011

90°

0.014

0.014

0.015

0.015

60°

0.020

0.020

0.021

0.021

30°

0.036

0.036

0.036

0.036