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CDSH270 Folha de dados(PDF) 1 Page - Central Semiconductor Corp

Nome de Peças CDSH270
Descrição Electrónicos  SILICON SCHOTTKY DIODE
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Fabricante Electrônico  CENTRAL [Central Semiconductor Corp]
Página de início  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CDSH270 Folha de dados(HTML) 1 Page - Central Semiconductor Corp

  CDSH270_15 Datasheet HTML 1Page - Central Semiconductor Corp CDSH270_15 Datasheet HTML 2Page - Central Semiconductor Corp  
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CDSH270
SILICON SCHOTTKY DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDSH270 silicon
Schottky diode is designed to replace the 1N270
Germanium diode. Some advantages over the 1N270
are lower forward voltage, lower leakage current, faster
switching speed, and a more robust package.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
100
mA
Peak Repetitive Forward Current
IFRM
350
mA
Peak Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
100
mW
Operating Junction Temperature
TJ
-65 to +125
°C
Storage Temperature
Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
300
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
TYP
MAX
UNITS
IR
VR=50V
100
nA
IR
VR=50V, TA=100°C
20
μA
VF
IF=1.0mA
0.45
V
VF
IF=100mA
0.9
V
VF
IF=200mA
1.0
V
CJ
VR=10V, f=1.0MHz
1.2
pF
DO-35 CASE
R1 (16-August 2012)
www.centr a lsemi.com


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