Os motores de busca de Datasheet de Componentes eletrônicos
  Portuguese  ▼
ALLDATASHEETPT.COM

X  

BCW73LT1 Folha de dados(PDF) 6 Page - Leshan Radio Company

Nome de Peças BCW73LT1
Descrição Electrónicos  General Purpose Transistors(NPN Silicon)
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrônico  LRC [Leshan Radio Company]
Página de início  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

BCW73LT1 Folha de dados(HTML) 6 Page - Leshan Radio Company

  BCW73LT1 Datasheet HTML 1Page - Leshan Radio Company BCW73LT1 Datasheet HTML 2Page - Leshan Radio Company BCW73LT1 Datasheet HTML 3Page - Leshan Radio Company BCW73LT1 Datasheet HTML 4Page - Leshan Radio Company BCW73LT1 Datasheet HTML 5Page - Leshan Radio Company BCW73LT1 Datasheet HTML 6Page - Leshan Radio Company  
Zoom Inzoom in Zoom Outzoom out
 6 / 6 page
background image
LESHAN RADIO COMPANY, LTD.
M14–6/6
T
J , JUNCTION TEMPERATURE (°C)
Figure 19A.
I
CEO
104
103
102
101
100
10–1
10–2
–4
–2
0
+20
+40
+60
+80
+100
+120
+140
+160
I
CBO
AND
I
CEX @ V BE(off) = 3.0 Vdc
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the
model as shown in Figure 19A. Using the model and the device
thermal response the normalized effective transient thermal re-
sistance of Figure 19 was calculated for various duty cycles.
To find Z θ
JA(t) , multiply the value obtained from Figure 19 by
the steady state value R θ
JA .
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t
1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P
(pk) x R
θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
t, TIME (ms)
Figure 19. Thermal Response
D = 0.5
0.02
0.05
0.1
0.2
0.01
SINGLE PULSE
DUTY CYCLE, D = t
1 / t 2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1 (SEE AN–569)
Z θ
JA(t) = r(t) • R
θJA
T
J(pk) – T A = P (pk) Z
θJA(t)
FIGURE 19A
P
(pk)
t
2
t
1
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10k
20k
50k
100k
V
CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 20.
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
4.0
6.0
8.0
10
20
40
The safe operating area curves indicate I
C –V CE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 20 is based upon T
J(pk) = 150°C; T C or
T
A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk) <150°C. T J(pk)
may be calculated from the data in Figure 19. At high case
or ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
T
A = 25°C
T
C = 25°C
T
J = 150°C
100
µs
1.0 ms
1.0 s
10
µs
dc
dc
400
200
100
60
40
20
10
6.0
4.0
BCW72LT1
V
CC = 30 Vdc


Nº de peça semelhante - BCW73LT1

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
NXP Semiconductors
BCW70 PHILIPS-BCW70 Datasheet
42Kb / 8P
   PNP general purpose transistors
1999 Apr 19
logo
Foshan Blue Rocket Elec...
BCW70 FOSHAN-BCW70 Datasheet
913Kb / 6P
   Silicon PNP transistor in a SOT-23 Plastic Package
logo
STMicroelectronics
BCW70 STMICROELECTRONICS-BCW70 Datasheet
38Kb / 4P
   SMALL SIGNAL PNP TRANSISTORS
logo
Nexperia B.V. All right...
BCW70 NEXPERIA-BCW70 Datasheet
317Kb / 7P
   PNP general purpose transistors
2004 Feb 06
logo
Samsung semiconductor
BCW70 SAMSUNG-BCW70 Datasheet
29Kb / 1P
   PNP EPITAXIAL SILICON TRANSISTOR
More results

Descrição semelhante - BCW73LT1

Fabricante ElectrônicoNome de PeçasFolha de dadosDescrição Electrónicos
logo
Leshan Radio Company
BC847BRLT1 LRC-BC847BRLT1 Datasheet
117Kb / 3P
   General Purpose Transistors(NPN Silicon)
BCW65ALT1 LRC-BCW65ALT1 Datasheet
52Kb / 2P
   General Purpose Transistors(NPN Silicon)
BCX70GLT1 LRC-BCX70GLT1 Datasheet
318Kb / 6P
   General Purpose Transistors(NPN Silicon)
logo
ON Semiconductor
2N4123 ONSEMI-2N4123_07 Datasheet
81Kb / 6P
   General Purpose Transistors NPN Silicon
March, 2007 ??Rev. 3
logo
Comchip Technology
MMBT2222LT1 COMCHIP-MMBT2222LT1_06 Datasheet
85Kb / 6P
   General Purpose Transistors NPN Silicon
logo
Leshan Radio Company
BC817-16LT1 LRC-BC817-16LT1 Datasheet
51Kb / 2P
   General Purpose Transistors(NPN Silicon)
logo
ON Semiconductor
2N4400 ONSEMI-2N4400 Datasheet
303Kb / 6P
   General Purpose Transistors(NPN Silicon)
1996 REV 1
BC818-40LT1G ONSEMI-BC818-40LT1G Datasheet
134Kb / 4P
   General Purpose Transistors NPN Silicon
August, 2009 ??Rev. 2
logo
Leshan Radio Company
L2SC2412KQMT1G LRC-L2SC2412KQMT1G Datasheet
147Kb / 4P
   General Purpose Transistors NPN Silicon
LBC846ALT1G LRC-LBC846ALT1G_11 Datasheet
573Kb / 13P
   General Purpose Transistors NPN Silicon
logo
ON Semiconductor
BC847ATT1 ONSEMI-BC847ATT1 Datasheet
75Kb / 6P
   General Purpose Transistors NPN Silicon
June, 2004 ??Rev. 1
More results


Html Pages

1 2 3 4 5 6


Folha de dados Download

Go To PDF Page


Ligação URL




Privacy Policy
ALLDATASHEETPT.COM
ALLDATASHEET é útil para você?  [ DONATE ] 

Sobre Alldatasheet   |   Publicidade   |   Contato conosco   |   Privacy Policy   |   roca de Link   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com