WBFBP-02C Plastic-Encapsulate Diodes

1SS400WB

SWITCHING DIODE

DESCRIPTION

Silicon Epitaxial Planar

FEATURES

Small Surface Mounting Type

High Speed

High Reliability with High Surge Current Handing Capability

APPLICATION

High Speed Switching for Detection

For Portable Equipment:(i.e. Mobile Phone,MP3, MD,CD-ROM,

DVD-ROM, Note Book PC, etc.)

MARKING: 7

Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25

℃

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

90

V

DC Reverse Voltage

80

V

Peak Forward Current

225

mA

Mean Rectifying Current

100

mA

Surge Current @t=1s

500

mA

Junction Temperature

150

℃

Storage Temperature

-55~+150

℃

Electrical Ratings @Ta=25

℃

Parameter

Symbol

Min

Typ

Max Unit

Conditions

Forward voltage

1.2

V

Reverse current

0.1

μ

A

Capacitance between terminals

3.0

pF

Reverse recovery time

4

ns

WBFBP-02C

(1.0×0.6×0.5)

unit: mm

VOLTAGE 90 Volts CURRENT 0.1 Ampere

201

1.11

WILLAS ELECTRONIC CORP.

Pb-Free package is available

RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Moisture Sensitivity Level 1