KF9N25P_15 datasheet(2/7 Pages) KEC

Nome de Peças	KF9N25P

Descrição Electrónicos	N CHANNEL MOS FIELD EFFECT TRANSISTOR

Download	7 Pages

Scroll/Zoom	100%

Fabricante Electrônico	KEC [KEC(Korea Electronics)]

Página de início	http://www.keccorp.com

Logo

2 / 7 page

2010. 12. 3

2/7

KF9N25P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

ID=250㎂ , VGS=0V

250

-

V

Breakdown Voltage Temperature Coefficient

ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃

-

0.22

-

V/

℃

Drain Cut-off Current

IDSS

VDS=250V, VGS=0V,

-

10

㎂

Gate Threshold Voltage

Vth

VDS=VGS, ID=250㎂

2.5

-

4.5

V

Gate Leakage Current

IGSS

VGS=±30V, VDS=0V

-

±100

nA

Drain-Source ON Resistance

RDS(ON)

VGS=10V, ID=4.5A

-

0.31

0.40

Ω

Dynamic

Total Gate Charge

Qg

VDS=200V, ID=9A

VGS=10V

(Note4,5)

-

14.5

-

nC

Gate-Source Charge

Qgs

-

3.2

-

Gate-Drain Charge

Qgd

-

6.3

-

Turn-on Delay time

td(on)

VDD=125V

ID=9A

RG=25Ω

(Note4,5)

-

15

-

ns

Turn-on Rise time

tr

-

25

-

Turn-off Delay time

td(off)

-

30

-

Turn-off Fall time

tf

-

15

-

Input Capacitance

Ciss

VDS=25V, VGS=0V, f=1.0MHz

-

560

-

pF

Output Capacitance

Coss

-

96

-

Reverse Transfer Capacitance

Crss

-

15

-

Source-Drain Diode Ratings

Continuous Source Current

IS

VGS<Vth

-

9

A

Pulsed Source Current

ISP

-

36

Diode Forward Voltage

VSD

IS=9A, VGS=0V

-

1.4

V

Reverse Recovery Time

trr

IS=9A, VGS=0V,

dIs/dt=100A/

㎲

-

160

-

ns

Reverse Recovery Charge

Qrr

-

0.95

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=3.6mH, IS=9A, VDD=50V, RG=25Ω, Starting Tj=25℃.

Note 3) IS≤9A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

001

2

KF9N25

F

1

001

2

KF9N25

P

1

2

PRODUCT NAME

LOT NO

1

Marking

Nº de peça semelhante - KF9N25P_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
KEC(Korea Electronics)	KF9N25P	97Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR

More results

Descrição semelhante - KF9N25P_15

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
KEC(Korea Electronics)	KHB7D0N65P1	450Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB6D0N40P	449Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB7D5N60P1	501Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB4D0N65P	397Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB4D0N80P1	504Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB4D5N60P	500Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB7D0N65P1	501Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KHB2D0N60P	501Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KF4N80F	389Kb / 6P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KF7N60P	401Kb / 7P	N CHANNEL MOS FIELD EFFECT TRANSISTOR
	KF10N65F	388Kb / 6P	N CHANNEL MOS FIELD EFFECT TRANSISTOR

More results

KF9N25P Folha de dados(PDF) 2 Page - KEC(Korea Electronics)

KF9N25P Folha de dados(HTML) 2 Page - KEC(Korea Electronics)

Nº de peça semelhante - KF9N25P_15

Descrição semelhante - KF9N25P_15

Html Pages

1 2 3 4 5 6 7

Folha de dados Download

Ligação URL