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IRF1104PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF1104PBF
Descrição Electrónicos  Advanced Process Technology
Download  9 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF1104PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF1104PbF
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.038 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.009
VGS = 10V, ID = 60A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
37
–––
–––
S
VDS = 25V, ID = 60A
–––
–––
25
µA
VDS = 40V, VGS = 0V
–––
––– 250
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
93
ID = 60A
Qgs
Gate-to-Source Charge
–––
–––
29
nC
VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
30
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 20V
tr
Rise Time
–––
114
–––
ID = 60A
td(off)
Turn-Off Delay Time
–––
28
–––
RG = 3.6Ω
tf
Fall Time
–––
19
–––
RD = 0.33Ω, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 2900 –––
VGS = 0V
Coss
Output Capacitance
––– 1100 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
250 –––
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 194µH
RG = 25Ω, IAS = 60A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 60A, VGS = 0V
„
trr
Reverse Recovery Time
–––
74
110
ns
TJ = 25°C, IF = 60A
Qrr
Reverse RecoveryCharge
–––
188
280
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
100
…
400
A
… Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4


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