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IRF1104PBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRF1104PBF Folha de dados(HTML) 2 Page - International Rectifier |
2 / 9 page IRF1104PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω VGS = 10V, ID = 60A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 37 ––– ––– S VDS = 25V, ID = 60A ––– ––– 25 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 93 ID = 60A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 15 ––– VDD = 20V tr Rise Time ––– 114 ––– ID = 60A td(off) Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω tf Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 2900 ––– VGS = 0V Coss Output Capacitance ––– 1100 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting TJ = 25°C, L = 194µH RG = 25Ω, IAS = 60A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 60A, VGS = 0V trr Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF = 60A Qrr Reverse RecoveryCharge ––– 188 280 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 100 400 A
Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 |
Nº de peça semelhante - IRF1104PBF_15 |
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Descrição semelhante - IRF1104PBF_15 |
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