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IRF1104SPBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRF1104SPBF Folha de dados(HTML) 2 Page - International Rectifier |
2 / 11 page IRF1104S/LPbF 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting TJ = 25°C, L = 194µH RG = 25Ω, IAS = 60A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRF1104 data and test conditions. Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =60A, VGS = 0V trr Reverse Recovery Time ––– 74 110 ns TJ = 25°C, IF =60A Qrr Reverse Recovery Charge ––– 188 280 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 100 400 S D G Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.038 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.009 Ω VGS = 10V, ID = 60A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 37 ––– ––– S VDS = 30V, ID = 60A ––– ––– 25 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 93 ID = 60A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 30 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 15 ––– VDD = 20V tr Rise Time ––– 114 ––– ID = 60A td(off) Turn-Off Delay Time ––– 28 ––– RG = 3.6Ω tf Fall Time ––– 19 ––– RD = 0.33Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 2900 ––– VGS = 0V Coss Output Capacitance ––– 1100 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance |
Nº de peça semelhante - IRF1104SPBF_15 |
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Descrição semelhante - IRF1104SPBF_15 |
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