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IRF3007PBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF3007PBF
Descrição Electrónicos  Ultra Low On-Resistance
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF3007PBF Folha de dados(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
This design of HEXFET® Power MOSFETs utilizes the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of
this HEXFET power MOSFET are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
S
D
G
VDSS = 75V
RDS(on) = 0.0126Ω
ID = 75A
Description
07/23/10
www.irf.com
1
Features
Typical Applications
l
Industrial Motor Drive
TO-220AB
IRF3007PbF
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.74
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon limited)
80
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (See Fig.9)
56
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package limited)
75
IDM
Pulsed Drain Current

320
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
280
mJ
EAS (6 sigma)
Single Pulse Avalanche Energy Tested Value
‡
946
IAR
Avalanche Current

See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
†
mJ
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw
1.1 (10)
N•m (lbf•in)
Absolute Maximum Ratings
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
PD -95618A


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