KTD1863_15 datasheet(1/2 Pages) KEC

Nome de Peças	KTD1863

Descrição Electrónicos	EPITAXIAL PLANAR NPN TRANSISTOR

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Fabricante Electrônico	KEC [KEC(Korea Electronics)]

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1998. 8. 21

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SEMICONDUCTOR

TECHNICAL DATA

KTD1863

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

GENERAL PURPOSE APPLICATION.

FEATURES

High Breakdown Voltage and High Current

: VCEO=80V, IC=1A.

Low VCE(sat)

Complementary to KTB1241.

MAXIMUM RATING (Ta=25 )

DIM

MILLIMETERS

A

B

D

E

G

H

K

L

1. EMITTER

2. COLLECTOR

3. BASE

P

TO-92L

7.20 MAX

5.20 MAX

2.50 MAX

0.60 MAX

1.27

1.70 MAX

0.55 MAX

14.00 0.50

0.35 MIN

0.75 0.10

4

F

J

M

O

Q

25

1.25

Φ1.50

0.10 MAX

DEPTH:0.2

123

B

C

Q

K

FF

M

N

H

L

D

C

N

P

HH

E

H

S

12.50 0.50

R

1.00

S

1.15 MAX

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : hFE Classification O:70 140, Y:120 240, GR:200 400

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

80

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

1

A

Emitter Current

IE

-1

A

Collector Power Dissipation

PC

1

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=80V, IE=0

-

1

A

Emitter-Cut-off Current

IEBO

VEB=4V, IC=0

-

1

A

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, IB=0

80

-

V

DC Current Gain

hFE (Note)

VCE=3V, IC=500mA

70

-

400

Collector-Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=20mA

-

0.4

V

Transition Frequency

fT

VCE=10V, IC=50mA, f=100MHz

-

100

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

20

-

pF

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