Features

1 of 8

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SBW-5089(Z)

DCto8GHz CASCADABLE InGaP/GaAs HBT

MMIC AMPLIFIER

The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Dar-

lington circuit fabricated with InGaP process technology provides broadband RF per-

formance up to 8GHz and excellent thermal performance. The heterojunction

increases breakdown voltage and minimizes leakage current between junctions.

Cancellation of emitter junction non-linearities results in high suppression of inter-

modulation products. Operation requires only a single positive voltage supply, 2 DC-

blocking capacitors, a bias resistor and an RF choke.

Tuned Application Circut

0

5

10

15

20

25

0123

4567

8

Frequency (GHz)

-25

-20

-15

-10

-5

0

Gain

ORL

IRL



Available in RoHS Compliant and

Pb-Free (Z Part Number)



50

 Cascadable Gain Block



Wideband Flat Gain to 3GHz:

+/-1.4dB





Input / Output VSWR

<2:3to8GHz



Patented Thermal Design



Single Voltage Supply Operation

Applications



Wideband Instrumentation



Fiber Optic Driver



OC-48



Basestation



SAT COM

DS091130



Package: SOT-89

SBW-5089(Z)

DCto8GHz

Cascadable

InGaP/GaAs

HBT MMIC

Amplifier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain, PC board and

connector losses de-embedded

19.3

20.3

21.3

dB

850MHz

17.0

18.0

19.0

dB

3000MHz

17.2

dB

4200MHz

14.5

15.5

16.5

dB

6000MHz

Output Power at 1dB Compression

20.1

dBm

850MHz

18.4

19.4

dBm

1950MHz

Output Third Order Intercept Point

35.5

dBm

850MHz

32.0

34.0

dBm

1950MHz

Output Power

13.0

dBm

1950MHz, -45dBc ACP IS-95 9 Forward Chan-

Determined by Return Loss

6000

MHz

>10dB

Noise Figure

3.9

4.4

dB

1950MHz

Worst case Input Return Loss

7.0

10.0

dB

DCto6000MHz

Worst case Output Return Loss

8.0

10.0

dB

DCto6000MHz

Device Operating Voltage

4.5

4.9

5.3

V

Device Operating Current

72.0

80.0

88.0

mA

Thermal Resistance

70

°C/W

junction to backside

Bias Resistance=39

