Os motores de busca de Datasheet de Componentes eletrônicos |
|
IRF6714MTRPBF Folha de dados(PDF) 1 Page - International Rectifier |
|
IRF6714MTRPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 04/29/09 IRF6714MPbF IRF6714MTRPbF DirectFET Power MOSFET Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance Vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.651mH, RG = 25Ω, IAS = 23A. Notes: l RoHs Compliant and Halogen Free l Low Profile (<0.6 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested SQ SX ST MQ MX MT MP DirectFET ISOMETRIC MX Description The IRF6714MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6714MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6714MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6714MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 ID = 29A TJ = 25°C TJ = 125°C Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy mJ IAR Avalanche Current A V A 23 175 Max. 23 166 234 ±20 25 29 VDSS VGS RDS(on) RDS(on) 25V max ±20V max 1.6m Ω@ 10V 2.6mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 29nC 8.3nC 4.1nC 36nC 23nC 1.9V 0 1020 30405060 7080 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 14 VDS= 20V VDS= 13V ID= 23A PD - 96130A |
Nº de peça semelhante - IRF6714MTRPBF |
|
Descrição semelhante - IRF6714MTRPBF |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |