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IRF6802SDPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF6802SDPBF
Descrição Electrónicos  RoHs Compliant Containing No Lead and Bromide
Download  9 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF6802SDPBF Folha de dados(HTML) 1 Page - International Rectifier

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DirectFET®
plus Power MOSFET ‚
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.78mH, RG = 50Ω, IAS = 13A.
Notes:
DirectFET®
plusISOMETRIC
l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible

l Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
SA
D
D
S
G
S
G
SQ
SX
ST
SA
MQ
MX
MT
MP
MB
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0
2
4
6
8
10
ID = 16A
TJ = 25°C
TJ = 125°C
0
5
10
15
20
25
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 20V
VDS= 13V
VDS= 6.0V
ID= 13A
VDSS
VGS
RDS(on)
RDS(on)
25V max ±16V max 3.2m
Ω@ 10V 4.5mΩ@ 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
66
Max.
13
57
130
±16
25
16
13
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.8nC
3.1nC
1.1nC
22nC
13nC
1.6V
Description
The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
IRF6802SDPbF
IRF6802SDTRPbF
1
www.irf.com © 2013 International Rectifier
September 10, 2013


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