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2N4921G Folha de dados(PDF) 4 Page - ON Semiconductor |
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2N4921G Folha de dados(HTML) 4 Page - ON Semiconductor |
4 / 6 page 2N4921G, 2N4922G, 2N4923G http://onsemi.com 4 Figure 4. Thermal Response t, TIME (ms) 1.0 0.01 0.01 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000 500 qJC(t) = r(t) qJC qJC = 4.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D = 0.5 0.2 0.05 0.01 0.1 SINGLE PULSE 10 1.0 Figure 5. Active−Region Safe Operating Area VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.1 2.0 3.0 5.0 10 20 30 50 100 70 0.2 TJ = 150°Cdc 5.0 ms 7.0 PULSE CURVES APPLY BELOW RATED VCEO SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C 7.0 3.0 0.7 0.3 1.0 ms 100 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 _C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5.0 10 Figure 6. Storage Time IC, COLLECTOR CURRENT (mA) 2.0 1.0 0.5 0.3 0.2 0.1 0.05 20 30 50 70 500 700 1000 0.07 100 3.0 0.7 200 300 TJ = 25°C TJ = 150°C IC/IB = 10 IC/IB = 20 5.0 10 Figure 7. Fall Time IC, COLLECTOR CURRENT (mA) 2.0 1.0 0.5 0.3 0.2 0.1 0.05 20 30 50 70 500 700 1000 0.07 100 3.0 0.7 200 300 TJ = 25°C TJ = 150°C IC/IB = 20 IC/IB = 10 IC/IB = 20 IB1 = IB2 ts′ = ts - 1/8 tf VCC = 30 V IB1 = IB2 |
Nº de peça semelhante - 2N4921G |
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Descrição semelhante - 2N4921G |
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