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IRF7404PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF7404PBF
Descrição Electrónicos  ULTRA LOW ON RESISTANCE
Download  9 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7404PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF7404PbF
2
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.012 –––
V/°C Reference to 25°C, ID = -1mA
––– ––– 0.040
VGS = -4.5V, ID = -3.2A ƒ
––– ––– 0.060
VGS = -2.7V, ID = -2.7A ƒ
VGS(th)
Gate Threshold Voltage
-0.70 ––– –––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
6.8 ––– –––
S
VDS = -15V, ID = -3.2A
––– ––– -1.0
VDS = -16V, VGS = 0V
––– ––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
––– ––– 100
VGS = 12V
Qg
Total Gate Charge
––– –––
50
ID = -3.2A
Qgs
Gate-to-Source Charge
––– ––– 5.5
nC
VDS = -16V
Qgd
Gate-to-Drain ("Miller") Charge
––– –––
21
VGS = -4.5V, See Fig. 6 and 12 ƒ
td(on)
Turn-On Delay Time
–––
14
–––
VDD = -10V
tr
Rise Time
–––
32
–––
ID = -3.2A
td(off)
Turn-Off Delay Time
––– 100 –––
RG = 6.0Ω
tf
Fall Time
–––
65
–––
RD = 3.1Ω, See Fig. 10 ƒ
Between lead tip
and center of die contact
Ciss
Input Capacitance
––– 1500 –––
VGS = 0V
Coss
Output Capacitance
––– 730 –––
pF
VDS = -15V
Crss
Reverse Transfer Capacitance
––– 340 –––
ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.0
V
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
69
100
ns
TJ = 25°C, IF = -3.2A
Qrr
Reverse RecoveryCharge
–––
71
110
µC
di/dt = 100A/µs ƒ
ton
Forward Turn-On Time
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
-27
––– ––– -3.1
A
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
––– 4.0
–––
LD
Internal Drain Inductance
––– 2.5
–––
nH
ns
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
S
D
G
S
D
G
„ Surface mounted on FR-4 board, t ≤ 10sec.


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