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IRF7425PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF7425PBF
Descrição Electrónicos  Industry-standard pinout SO-8 Package
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7425PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF7425PbF
2
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October 29, 201
3
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
120
180
ns
TJ = 25°C, IF = -2.5A
Qrr
Reverse Recovery Charge
–––
160
240
nC
di/dt = -100A/μs
‚
Source-Drain Ratings and Characteristics
A
-60
–––
–––
–––
-2.5
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V
VGS = 0V, ID = -250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.010 –––
V/°C Reference to 25°C, ID = -1mA
––– –––
8.2
VGS = -4.5V, ID = -15A
‚
––– –––
13
VGS = -2.5V, ID = -13A
‚
VGS(th)
Gate Threshold Voltage
-0.45 ––– -1.2
V
VDS = VGS, ID = -250μA
gfs
Forward Transconductance
44
–––
–––
S
VDS = -10V, ID = -15A
––– ––– -1.0
VDS = -16V, VGS = 0V
––– –––
-25
VDS = -16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -12V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = 12V
Qg
Total Gate Charge
–––
87
130
ID = -15A
Qgs
Gate-to-Source Charge
–––
18
27
nC
VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
21
32
VGS = -4.5V
td(on)
Turn-On Delay Time
–––
13
–––
VDD = -10V
‚
tr
Rise Time
–––
20
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
––– 230
–––
RG = 6.0
Ω
tf
Fall Time
––– 160
–––
VGS = -4.5V
Ciss
Input Capacitance
––– 7980 –––
VGS = 0V
Coss
Output Capacitance
––– 1480 –––
pF
VDS = -15V
Crss
Reverse Transfer Capacitance
––– 980
–––
ƒ = 1.0kHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
Ω
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.


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