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2SA1419T-TD-H Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças 2SA1419T-TD-H
Descrição Electrónicos  Bipolar Transistor High breakdown voltage and large current capacity
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/7
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
2SA1419/2SC3649
Bipolar Transistor
(–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications ( ) : 2SA1419
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)180
V
Collector-to-Emitter Voltage
VCEO
(--)160
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)1.5
A
Collector Current (Pulse)
ICP
(--)2.5
A
Collector Dissipation
PC
500
mW
When mounted on ceramic substrate (250mm2×0.8mm)
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : EN2007C
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
2SA1419S-TD-E
2SA1419S-TD-H
2SA1419T-TD-E
2SA1419T-TD-H
2SC3649S-TD-E
2SC3649S-TD-H
2SC3649T-TD-E
2SC3649T-TD-H
2SC3649
2SA1419
RANK
RANK
2
3
1
2SC3649
2
3
1
2SA1419


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