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IRF7807D1PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF7807D1PBF
Descrição Electrónicos  Low Conduction Losses
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7807D1PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRF7807D1PbF
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Electrical Characteristics
Schottky Diode & Body Diode Ratings and Characteristics

Repetitive rating; pulse width limited by max. junction temperature.
‚
Pulse width
≤ 300 µs; duty cycle ≤ 2%.
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
„
50% Duty Cycle, Rectangular
*
Devices are 100% tested to these parameters.
Parameter
Min
Typ
Max
Units
Conditions
Diode Forward Voltage
V
SD
0.5
V
T
j = 25°C, Is = 1A, VGS =0V‚
0.39
T
j = 125°C, Is = 1A, VGS =0V‚
Reverse Recovery Time
trr
51
ns
T
j = 25°C, Is = 7.0A, VDS = 16V
Reverse Recovery Charge
Qrr
48
nC di/dt = 100A/µs
Forward Turn-On Time
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S+LD)
Parameter
Min
Typ
Max
Units
Conditions
Drain-to-Source
V
(BR)DSS
30
V
V
GS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source
R
DS(on)
17
25
m
V
GS = 4.5V, ID = 7A
‚
on Resistance*
Gate Threshold Voltage* V
GS(th)
1.0
V
V
DS = VGS,ID = 250µA
Drain-Source Leakage
I
DSS
90
µAV
DS = 24V, VGS = 0V
Current*
7.2
mA
V
DS = 24V, VGS = 0V,
T
j = 125°C
Gate-Source Leakage
I
GSS
+/- 100
nA
V
GS = +/-12V
Current*
Total Gate Charge
Q
gsync
10.5
14
V
DS<100mV,
Synch FET*
V
GS = 5V, ID = 7A
Total Gate Charge
Q
gcont
12
17
V
DS= 16V,
Control FET*
V
GS = 5V, ID = 7A
Pre-Vth
Q
gs1
2.1
V
DS = 16V, ID = 7A
Gate-Source Charge
Post-Vth
Q
gs2
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Q
gd
2.9
Switch Charge*
Q
SW
3.66
5.2
(Q
gs2 + Qgd)
Output Charge*
Q
oss
15.3
18.4
V
DS = 16V, VGS = 0
Gate Resistance
R
g
1.2


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