IRF8707PBF_15 datasheet(1/9 Pages) IRF

Nome de Peças	IRF8707PBF

Descrição Electrónicos	Fully Characterized Avalanche Voltage and Current

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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10/24/07

IRF8707PbF

HEXFET® Power MOSFET

Notes

through are on page 9

Benefits

l Very Low Gate Charge

l Very Low RDS(on) at 4.5V VGS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l 20V VGS Max. Gate Rating

l 100% tested for Rg

l Lead-Free

Applications

l Control MOSFET of Sync-Buck

Converters used for Notebook

Processor Power

l Control MOSFET for Isolated

DC-DC Converters in Networking

Systems

Top View

8

1

2

3

4

5

6

7

D

G

S

A

S

A

SO-8

VDSS

RDS(on) max

Qg

30V

11.9m:@VGS = 10V 6.2nC

Description

The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratings

Parameter

Units

VDS

Drain-to-Source Voltage

VGS

Gate-to-Source Voltage

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

c

PD @TA = 25°C

Power Dissipation

PD @TA = 70°C

Power Dissipation

Linear Derating Factor

W/°C

TJ

Operating Junction and

TSTG

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

g

–––

20

RθJA

Junction-to-Ambient

fg

–––

50

°C/W

V

A

W

°C

Max.

11

9.1

88

± 20

30

-55 to + 150

2.5

0.02

1.6

PD - 96118A

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