www.irf.com

1

9/8/08

IRFB4332PbF

Notes

 through † are on page 8

Description

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve

operating junction temperature and high repetitive peak current capability. These features combine to

make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Features

l

Advanced Process Technology

l

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

l

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

l

l

High Repetitive Peak Current Capability for

Reliable Operation

l

Short Fall & Rise Times for Fast Switching

l

175°C Operating Junction Temperature for

Improved Ruggedness

l

Repetitive Avalanche Capability for Robustness

and Reliability

S

D

G

PDP SWITCH

TO-220AB

D

S

D

G

GD

S

Gate

Drain

Source

250

V

300

V

29

m

:

175

°C

Key Parameters

Absolute Maximum Ratings

Parameter

Units

Gate-to-Source Voltage

V

A

Pulsed Drain Current

c

Repetitive Peak Current

gh

Power Dissipation

W

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

N

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

f

–––

0.38

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

Junction-to-Ambient

f

–––

62

Max.

42

230

60

±30

120

300

-40 to + 175

10lb

xin (1.1Nxm)

390

200

2.6

PD - 97099A