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BCW89 Folha de dados(PDF) 2 Page - NXP Semiconductors

Nome de Peças BCW89
Descrição Electrónicos  PNP general purpose transistor
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCW89 Folha de dados(HTML) 2 Page - NXP Semiconductors

  BCW89_15 Datasheet HTML 1Page - NXP Semiconductors BCW89_15 Datasheet HTML 2Page - NXP Semiconductors BCW89_15 Datasheet HTML 3Page - NXP Semiconductors BCW89_15 Datasheet HTML 4Page - NXP Semiconductors BCW89_15 Datasheet HTML 5Page - NXP Semiconductors BCW89_15 Datasheet HTML 6Page - NXP Semiconductors  
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1999 Apr 15
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
BCW89
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 60 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
MARKING
Note
1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
BCW89
H3
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−80
V
VCEO
collector-emitter voltage
open base; IC = −2 mA
−60
V
VEBO
emitter-base voltage
open collector
−5
V
IC
collector current (DC)
−100
mA
ICM
peak collector current
−200
mA
IBM
peak base current
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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