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BCW89 Folha de dados(PDF) 2 Page - NXP Semiconductors |
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BCW89 Folha de dados(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 1999 Apr 15 2 NXP Semiconductors Product data sheet PNP general purpose transistor BCW89 FEATURES • Low current (max. 100 mA) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in a SOT23 plastic package. MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING TYPE NUMBER MARKING CODE(1) BCW89 H3 ∗ PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM256 Top view 2 3 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −80 V VCEO collector-emitter voltage open base; IC = −2 mA − −60 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Nº de peça semelhante - BCW89_15 |
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Descrição semelhante - BCW89_15 |
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