KDV302E_15 datasheet(1/2 Pages) KEC

Nome de Peças	KDV302E

Descrição Electrónicos	SILICON EPITAXIAL PLANAR DIODE

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Fabricante Electrônico	KEC [KEC(Korea Electronics)]

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2014. 3. 31

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SEMICONDUCTOR

TECHNICAL DATA

KDV302E

Revision No : 1

TV TUNING.

FEATURES

・High Capacitance Ratio

・Low Series Resistance

MAXIMUM RATING (Ta=25℃)

1. ANODE

2. CATHODE

ESC

DIM

MILLIMETERS

A

B

C

D

E

1.60 0.10

1.20 0.10

0.80 0.10

0.30 0.05

0.60 0.10

D

C

1

2

E

F

0.13 0.05

F

G

+

_

+

_

+

_

+

_

+

_

+

_

0.20 0.10

+

_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

Type Name

Marking

5

V

CHARACTERISTIC

SYMBOL

RATING

UNIT

Reverse Voltage

VR

32

V

Junction Temperature

Tj

125

℃

Storage Temperature Range

Tstg

-55～125

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Current

IR

VR=32V

-

10

nA

Capacitance

C1V

VR=1V, f=1MHz

56.0

-

62.0

pF

C2V

VR=2V, f=1MHz

-

46.0

-

pF

C25V

VR=25V, f=1MHz

-

2.85

-

pF

C28V

VR=28V, f=1MHz

2.45

-

2.80

pF

Capacitance Ratio

C1V/C28V

-

21.6

22.4

-

C1V/C2V

-

1.25

-

C25V/C28V

-

1.07

1.08

-

Series Resistance

rs

VR=5V, f=470MHz

-

1.15

Ω

Note : Available in matched group for capacitance to 2.0%.

C(Max.)-C(Min.)

≦0.02

C(Min.)

(VR=1~28V)

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