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2SD1801 Folha de dados(PDF) 2 Page - ON Semiconductor

Nome de Peças 2SD1801
Descrição Electrónicos  Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
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Fabricante Electrônico  ONSEMI [ON Semiconductor]
Página de início  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SD1801 Folha de dados(HTML) 2 Page - ON Semiconductor

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2SB1201 / 2SD1801
No.2112-2/10
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
0.8
W
Tc=25°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)100mA
100*
560*
hFE2VCE=(--)2V, IC=(--)1.5A
40
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
150
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(22)12
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)1A, IB=(--)50mA
(--0.3)0.15
(--0.7)0.4
V
Base-to-Emitter Saturation Voltage
VBE(sat)
VCE=(--)1A, IC=(--)50mA
(--)0.9
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
60
ns
Storage Time
tstg
(450)550
ns
Fall Time
tf
30
ns
* : The 2SB1201/2SD1801 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SB1201S-E
TP
500pcs./bag
Pb Free
2SB1201T-E
TP
500pcs./bag
2SD1801S-E
TP
500pcs./bag
2SD1801T-E
TP
500pcs./bag
2SB1201S-TL-E
TP-FA
700pcs./reel
2SB1201T-TL-E
TP-FA
700pcs./reel
2SD1801S-TL-E
TP-FA
700pcs./reel
2SD1801T-TL-E
TP-FA
700pcs./reel
VR
RB
VCC=25V
VBE= --5V
+
+
50Ω
INPUT
RL
25Ω
OUTPUT
100μF
470μF
PW=20μs
IB1
D.C. 1%
IB2
IC=10IB1= --10IB2=500mA, VCC=25V
For PNP, the polarity is reversed.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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