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2SC6095 Folha de dados(PDF) 2 Page - ON Semiconductor |
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2SC6095 Folha de dados(HTML) 2 Page - ON Semiconductor |
2 / 7 page 2SC6095 No. A0411-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current IB 500 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2×0.8mm) 1.3 W Tc=25°C 3.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=70V, IE=0A 1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 1 μA DC Current Gain hFE VCE=5V, IC=100mA 300 600 Gain-Bandwidth Product fT VCE=10V, IC=500mA 350 MHz Output Capacitance Cob VCB=10V, f=1MHz 14 pF Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=1A, IB=50mA 100 150 mV VCE(sat)2 IC=1A, IB=100mA 90 135 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=100mA 0.9 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 120 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100μA, RBE=0Ω 120 V V(BR)CEO IC=1mA, RBE=∞ 80 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6.5 V Turn-ON Time ton See specified Test Circuit. 40 ns Storage Time tstg 920 ns Fall Time tf 32 ns Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SC6095-TD-E PCP 1,000pcs./reel Pb Free VR10 RB VCC=40V IC=10IB1= --10IB2=0.5A VBE= --5V + + 50Ω INPUT OUTPUT RL 470μF 100μF PW=20μs IB1 D.C.≤1% IB2 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
Nº de peça semelhante - 2SC6095 |
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Descrição semelhante - 2SC6095 |
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