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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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IRFP4410ZPBF Folha de dados(PDF) 2 Page - International Rectifier |
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IRFP4410ZPBF Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP4410ZPbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.143mH RG = 25Ω, IAS = 58A, VGS =10V. Part not recommended for use above this value. ISD ≤ 58A, di/dt ≤ 610A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom- mended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V ∆V (BR)DSS/ ∆T J Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.2 9.0 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 0.70 ––– Ω Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 140 ––– ––– S Qg Total Gate Charge ––– 83 120 nC Qgs Gate-to-Source Charge ––– 19 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 27 Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 56 ––– td(on) Turn-On Delay Time ––– 16 ––– ns tr Rise Time ––– 52 ––– td(off) Turn-Off Delay Time ––– 43 ––– tf Fall Time ––– 57 ––– Ciss Input Capacitance ––– 4820 ––– pF Coss Output Capacitance ––– 340 ––– Crss Reverse Transfer Capacitance ––– 170 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) h ––– 420 ––– Coss eff. (TR) Effective Output Capacitance (Time Related) g ––– 690 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 97 A (Body Diode) ISM Pulsed Source Current ––– ––– 390 A (Body Diode) c VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C VR = 85V, ––– 46 69 TJ = 125°C IF = 58A Qrr Reverse Recovery Charge ––– 53 80 nC TJ = 25°C di/dt = 100A/µs f ––– 82 120 TJ = 125°C IRRM Reverse Recovery Current ––– 2.5 ––– A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ID = 58A RG =2.7 Ω VGS = 10V f VDD = 65V ID = 58A, VDS =0V, VGS = 10V f TJ = 25°C, IS = 58A, VGS = 0V f integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 5mA c VGS = 10V, ID = 58A f VDS = VGS, ID = 150µA VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C MOSFET symbol showing the VDS =50V Conditions VGS = 10V f VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 80V h, See Fig.11 VGS = 0V, VDS = 0V to 80V g Conditions VDS = 10V, ID = 58A ID = 58A VGS = 20V VGS = -20V |
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