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IRL6283MPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRL6283MPBF
Descrição Electrónicos  Environmentally Friendly Product
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
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IRL6283MPBF Folha de dados(HTML) 1 Page - International Rectifier

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September 24, 2014
StrongIRFET™
IRL6283MTRPbF
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRL6283MTRPbF
DirectFET Medium Can
Tape and Reel
4800
IRL6283MTRPbF
Applications
•ORing, eFuse, and high current
load switch
•Load switch for battery
application
•Inverter switches for DC motor
application
Features and Benefits
•Environmentally Friendly Product
•RoHs compliant containing no Lead, no Bromide
and no Halogen
•Very Low RDS(on)
SQ
SX
ST
MQ
MD
MT
MP
MC
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max
0.65m
Ω@4.5V 1.1mΩ@2.5V
Vgs(th)
0.8V
RDS(on)
0.50m
Ω@10V
Description
The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct-
FET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
Absolute Maximum Ratings
Parameter
Max.
Units
VGS
Gate-to-Source Voltage
±12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V 
38
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V 
30
IDM
Pulsed Drain Current 
305
ID @ TC = 25°C
Continuous Drain Current, VGS @ 4.5V 
211
EAS
Single Pulse Avalanche Energy 
406
IAR
Avalanche Current 
30
A
mJ
A
Fig 1. Typical On-Resistance vs. Gate Voltage
0
50
100
150
200
250
300
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 16V
VDS= 10V
VDS= 4.0V
ID= 30A
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.88mH, RG = 50
Ω, IAS = 30A.
DirectFET™ ISOMETRIC
MD
0
1
2
3
4
5
6
7
8
9 10 11 12
VGS, Gate -to -Source Voltage (V)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID = 38A
TJ = 25°C
TJ = 125°C
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) 
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) 
DirectFET® N-Channel Power MOSFET 
DD
S
S
S
G
S


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