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IRL6283MPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRL6283MPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 9 page 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 24, 2014 StrongIRFET™ IRL6283MTRPbF Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRL6283MTRPbF DirectFET Medium Can Tape and Reel 4800 IRL6283MTRPbF Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Features and Benefits •Environmentally Friendly Product •RoHs compliant containing no Lead, no Bromide and no Halogen •Very Low RDS(on) SQ SX ST MQ MD MT MP MC Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±12V max 0.65m Ω@4.5V 1.1mΩ@2.5V Vgs(th) 0.8V RDS(on) 0.50m Ω@10V Description The IRL6283MTRPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The Direct- FET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Absolute Maximum Ratings Parameter Max. Units VGS Gate-to-Source Voltage ±12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 38 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 30 IDM Pulsed Drain Current 305 ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 211 EAS Single Pulse Avalanche Energy 406 IAR Avalanche Current 30 A mJ A Fig 1. Typical On-Resistance vs. Gate Voltage 0 50 100 150 200 250 300 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 16V VDS= 10V VDS= 4.0V ID= 30A Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.88mH, RG = 50 Ω, IAS = 30A. DirectFET™ ISOMETRIC MD 0 1 2 3 4 5 6 7 8 9 10 11 12 VGS, Gate -to -Source Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID = 38A TJ = 25°C TJ = 125°C Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) DirectFET® N-Channel Power MOSFET DD S S S G S |
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