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IRL6297SDPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRL6297SDPBF
Descrição Electrónicos  Charge and Discharge Switch for Battery Application
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRL6297SDPBF Folha de dados(HTML) 1 Page - International Rectifier

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Typical values (unless otherwise specified)
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

DirectFET® Dual N-Channel Power MOSFET
‚
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Features and Benefits
l Environmentaly Friendly Product
l RoHs Compliant, Halogen Free
l Dual Common-Drain N-Channel MOSFETs Provides
High Level of Integration and Very Low RDS(on)
Applications
l Charge and Discharge Switch for Battery Application
l Isolation Switch for Input Power or Battery Application
DirectFET®ISOMETRIC
SA
Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET®
packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and
processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
SQ
SX
ST
SA
MQ
MX
MT
MP
MC
0
1
2
3
4
5
6
7
8
9 10 11 12
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
ID = 15A
TJ = 25°C
TJ = 125°C
0
1020
3040506070
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VDS= 16V
VDS= 10V
VDS= 4.0V
ID= 12A
D
D
S
G
S
G
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 3.8m
Ω@4.5V 5.4mΩ@2.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
Max.
12
58
140
±12
20
15
V
A
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
27nC
9.5nC
1.4nC
21nC
15nC
0.80V
1
www.irf.com © 2013 International Rectifier
September 5, 2013
IRL6297SDPbF
Form
Quantity
IRL6297SDPbF
DirectFET Small Can
Tape and Reel
4800
IRL6297SDTRPbF
Base Part Number
Package Type
Standard Pack
Orderable part number


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