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IRL6297SDPBF Folha de dados(PDF) 1 Page - International Rectifier |
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IRL6297SDPBF Folha de dados(HTML) 1 Page - International Rectifier |
1 / 9 page Typical values (unless otherwise specified) Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) DirectFET® Dual N-Channel Power MOSFET Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Features and Benefits l Environmentaly Friendly Product l RoHs Compliant, Halogen Free l Dual Common-Drain N-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applications l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application DirectFET®ISOMETRIC SA Description The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. SQ SX ST SA MQ MX MT MP MC 0 1 2 3 4 5 6 7 8 9 10 11 12 VGS, Gate -to -Source Voltage (V) 0 5 10 15 20 ID = 15A TJ = 25°C TJ = 125°C 0 1020 3040506070 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 16V VDS= 10V VDS= 4.0V ID= 12A D D S G S G VDSS VGS RDS(on) RDS(on) 20V max ±12V max 3.8m Ω@4.5V 5.4mΩ@2.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g Max. 12 58 140 ±12 20 15 V A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 27nC 9.5nC 1.4nC 21nC 15nC 0.80V 1 www.irf.com © 2013 International Rectifier September 5, 2013 IRL6297SDPbF Form Quantity IRL6297SDPbF DirectFET Small Can Tape and Reel 4800 IRL6297SDTRPbF Base Part Number Package Type Standard Pack Orderable part number |
Nº de peça semelhante - IRL6297SDPBF_15 |
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Descrição semelhante - IRL6297SDPBF_15 |
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