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IRL6372PBF Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRL6372PBF
Descrição Electrónicos  Industry-Standard SO-8 Package
Download  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRL6372PBF Folha de dados(HTML) 2 Page - International Rectifier

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IRL6372PbF
2
www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ When mounted on 1 ich square copper board.
„ Rθ is measured at TJ of approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
23
–––
mV/°C
RDS(on)
–––
14.0
17.9
–––
17.0
23.0
VGS(th)
Gate Threshold Voltage
0.5
–––
1.1
V
VDS = VGS, ID = 10µA
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-4.0
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
30
–––
–––
S
Qg
Total Gate Charge
–––
11
–––
Qgs1
Pre-Vth Gate-to-Source Charge
–––
0.01
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.50
–––
Qgd
Gate-to-Drain Charge
–––
4.8
–––
Qgodr
Gate Charge Overdrive
–––
5.69
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
5.3
–––
RG
Gate Resistance
–––
2.2
–––
td(on)
Turn-On Delay Time
–––
5.9
–––
tr
Rise Time
–––13–––
td(off)
Turn-Off Delay Time
–––
34
–––
tf
Fall Time
–––
15
–––
Ciss
Input Capacitance
–––
1020
–––
Coss
Output Capacitance
–––
98
–––
Crss
Reverse Transfer Capacitance
–––
68
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
13
20
ns
Qrr
Reverse Recovery Charge
–––
5.3
8.0
nC
Thermal Resistance
Parameter
Units
RθJL
Junction-to-Drain Lead
f
RθJA
Junction-to-Ambient
e
nC
VGS = 4.5V
VDS = 15V
ID = 6.5A
Conditions
See Figs. 18
ƒ = 1.0MHz
VGS = 0V
VDS = 25V
VDS = 24V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.1A d
VGS = 2.5V, ID = 6.5A d
m
µA
TJ = 25°C, IF = 6.5A, VDD = 24V
di/dt = 100/µs
d
TJ = 25°C, IS = 6.5A, VGS = 0V d
showing the
integral reverse
p-n junction diode.
MOSFET symbol
RG = 6.8
VDS = 10V, ID = 6.5A
VDS = 24V, VGS = 0V, TJ = 125°C
VDD = 15V, VGS = 4.5V eÃ
ID = 6.5A
VGS = 12V
VGS = -12V
ns
pF
Static Drain-to-Source On-Resistance
A
–––
–––
–––
–––
2.0
65
nA
°C/W
Max.
20
62.5
Typ.
–––
–––


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