IRLML2060PBF_15 datasheet(1/10 Pages) IRF

Nome de Peças	IRLML2060PBF

Descrição Electrónicos	Compatible with existing Surface Mount Techniques

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Fabricante Electrônico	IRF [International Rectifier]

Página de início	http://www.irf.com

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1 / 10 page

03/09/12

IRLML2060TRPbF

HEXFET® Power MOSFET

www.irf.com

1

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes

through are on page 10

Application(s)

Micro3TM (SOT-23)

IRLML2060TRPbF

'

6

*

Load/ System Switch

Features and Benefits

Absolute Maximum Ratings

Symbol

Parameter

Units

VDS

Drain-Source Voltage

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

IDM

Pulsed Drain Current

PD @TA = 25°C

Maximum Power Dissipation

PD @TA = 70°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

VGS

Gate-to-Source Voltage

V

TJ, TSTG

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJA

Junction-to-Ambient

e

–––

100

RJA

Junction-to-Ambient (t<10s)

f

–––

99

0.80

4.8

W

°C/W

A

Max.

1.2

0.93

-55 to + 150

± 16

0.01

60

1.25

Features

Benefits

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

results in Easier manufacturing

RoHS compliant containing no lead, no bromide and no halogen



Environmentally friendly

MSL1

Increased reliability

VDS

60

V

VGS Max

± 16

V

RDS(on) max

(@VGS = 10V)

480

m



RDS(on) max

(@VGS = 4.5V)

640

m



PD - 97448A

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