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IRLML2502PBF-1 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRLML2502PBF-1
Descrição Electrónicos  Compatible with Existing Surface Mount Techniques
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRLML2502PBF-1 Folha de dados(HTML) 2 Page - International Rectifier

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IRLML2502PbF-1
2
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 28, 2014
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
‚ Pulse width ≤ 300μs; duty cycle ≤ 2%.
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.01
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.035
0.045
Ω
–––
0.050
0.080
VGS(th)
Gate Threshold Voltage
0.60
–––
1.2
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-3.2
–––
mV/°C
gfs
Forward Transconductance
5.8
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
25
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Qg
Total Gate Charge
–––
8.0
12
Qgs
Gate-to-Source Charge
–––
1.8
2.7
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.7
2.6
td(on)
Turn-On Delay Time
–––
7.5
–––
tr
Rise Time
–––
10
–––
td(off)
Turn-Off Delay Time
–––
54
–––
tf
Fall Time
–––
26
–––
Ciss
Input Capacitance
–––
740
–––
Coss
Output Capacitance
–––
90
–––
Crss
Reverse Transfer Capacitance
–––
66
–––
Source-Drain Rating and Characteristics
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
16
24
ns
Qrr
Reverse Recovery Charge
–––
8.6
13
nC
MOSFET symbol
nA
ns
A
pF
nC
VDS = 10V
VGS = 12V
VGS = -12V
Conditions
VGS = 0V, ID = 250uA
Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 4.2A d
–––
–––
33
–––
–––
1.3
Conditions
RD = 10Ω d
ƒ = 1.0MHz
TJ = 25°C, IF = 1.3A
di/dt = 100A/μs dÃ
TJ = 25°C, IS = 1.3A, VGS = 0V d
showing the
integral reverse
p-n junction diode.
RG = 6
Ω
VDS = 10V, ID = 4.0A
VDS = 16V, VGS = 0V, TJ = 70°C
μA
VGS = 5.0V d
ID = 1.0A
VGS = 0V
VDS = 15V
ID = 4.0A
VDS = VGS, ID = 250μA
VGS = 2.5V, ID = 3.6A d
VDS = 16V, VGS = 0V
VDD = 10V


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