FifthGenerationHEXFETsfromInternationalRectifierutilizeadvanced

processing techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power MOSFETs are

well known for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

A customized leadframe has been incorporated into the standard

SOT-23 package to produce a HEXFET Power MOSFET with the

industry's smallest footprint. This package, dubbed the Micro3, is

ideal for applications where printed circuit board space is at a

premium. The low profile (<1.1mm) of the Micro3 allows it to fit

easily into extremely thin application environments such as portable

electronics and PCMCIA cards

.

Description

l

Generation V Technology

l

Ultra Low On-Resistance

l

P-ChannelMOSFET

l

SOT-23Footprint

l

Low Profile (<1.1mm)

l

Available in Tape and Reel

l

Fast Switching

l

Lead-Free

l

RoHS Compliant, Halogen-Free

Parameter

Max.

Units

-0.78

-0.62

A

Pulsed Drain Current 

-4.9

Power Dissipation

540

mW

Linear Derating Factor

4.3

mW/°C

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt ‚

-5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

230

Thermal Resistance

°C/W

S

G 1

2

D

3

IRLML6302PbF

Form

Quantity

IRLML6302TRPbF

Micro3™ (SOT-23)

Tape and Reel

3000

IRLML6302TRPbF

Package Type

Standard Pack

Orderable Part Number

Base Part Number

1

Submit Datasheet Feedback

April 28, 2014