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IRLML6401PBF-1 Folha de dados(PDF) 2 Page - International Rectifier |
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IRLML6401PBF-1 Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLML6401PbF-1 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V trr Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = -1.3A Qrr Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/μs Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300μs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics -1.3 -34 A S D G Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 3.5mH RG = 25Ω, IAS = -4.3A. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.050 VGS = -4.5V, ID = -4.3A RDS(on) Static Drain-to-Source On-Resistance ––– 0.085 VGS = -2.5V, ID = -2.5A ––– 0.125 VGS = -1.8V, ID = -2.0A VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250μA gfs Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A ––– ––– -1.0 VDS = -12V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V Qg Total Gate Charge ––– 10 15 ID = -4.3A Qgs Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V td(on) Turn-On Delay Time ––– 11 ––– VDD = -6.0V tr Rise Time ––– 32 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 250 ––– RD = 6.0 Ω tf Fall Time ––– 210 ––– RG = 89 Ω Ciss Input Capacitance ––– 830 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS μA Ω IDSS Drain-to-Source Leakage Current nA ns |
Nº de peça semelhante - IRLML6401PBF-1 |
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Descrição semelhante - IRLML6401PBF-1 |
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