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BYC20DX-600P Folha de dados(PDF) 3 Page - NXP Semiconductors |
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3 / 9 page NXP Semiconductors BYC20DX-600P Hyperfast power diode BYC20DX-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 9 May 2014 3 / 9 Symbol Parameter Conditions Min Max Unit tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3 - 250 A IFSM non-repetitive peak forward current tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3 - 275 A Tstg storage temperature -65 175 °C Tj junction temperature - 175 °C aaa-010043 IF(AV) (A) 0 30 20 10 20 40 60 Ptot (W) 0 δ = 1 0.5 0.2 0.1 Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values IF(AV) (A) 0 20 15 5 10 aaa-010044 20 30 10 40 50 Ptot (W) 0 a = 1.57 1.9 2.2 2.8 4.0 Fig. 2. Forward power dissipation as a function of average forward current; sinusoidal waveform; maximum values tp (s) 10-5 10-2 10-3 10-4 aaa-010046 103 102 104 IFSM (A) 10 tp Tj(init) = 25 °C max IF IFSM t Fig. 3. Non-repetitive peak forward current as a function of pulse width; sinusoidal waveform; maximum values |
Nº de peça semelhante - BYC20DX-600P_15 |
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Descrição semelhante - BYC20DX-600P_15 |
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