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IRLMS5703PBF Folha de dados(PDF) 6 Page - International Rectifier |
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IRLMS5703PBF Folha de dados(HTML) 6 Page - International Rectifier |
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6 / 8 page  IRLMS5703PbF 6 www.irf.com Peak Diode Recovery dv/dt Test Circuit P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - RG VDD • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Reverse Polarity of D.U.T for P-Channel * VGS* ** [ ] [ ] *** VGS = 5.0V for Logic Level and 3V Drive Devices [ ] *** Fig 13. For P-channel HEXFET® power MOSFET s |
Nº de peça semelhante - IRLMS5703PBF_15 |
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Descrição semelhante - IRLMS5703PBF_15 |
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