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IRF5N3205 Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRF5N3205
Descrição Electrónicos  Avalanche Energy Ratings
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF5N3205 Folha de dados(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
55*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
55*
IDM
Pulsed Drain Current
À
220
PD @ TC = 25°C
Max. Power Dissipation
125
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
Á
140
mJ
IAR
Avalanche Current
À
55
A
EAR
Repetitive Avalanche Energy
À
12.5
mJ
dv/dt
Peak Diode Recovery dv/dt
Â
2.7
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temp.
300 (for 5s)
Weight
2.6 (Typical)
g
oC
A
05/17/05
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF5N3205
55V
0.008
Ω 55A*
For footnotes refer to the last page
HEXFET® POWER MOSFET
IRF5N3205
SURFACE MOUNT (SMD-1)
55V, N-CHANNEL
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high-energy pulse
circuits.
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
SMD-1
PD-94302B
* Current is limited by package


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