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IRF7NA2907 Folha de dados(PDF) 1 Page - International Rectifier |
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IRF7NA2907 Folha de dados(HTML) 1 Page - International Rectifier |
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1 / 7 page  01/27/15 www.irf.com 1 Product Summary Part Number BVDSS RDS(on) ID IRF7NA2907 75V 0.0045 Ω 75A* For footnotes refer to the last page HEXFET® POWER MOSFET IRF7NA2907 SURFACE MOUNT (SMD-2) 75V, N-CHANNEL Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Features: n Low RDS(on) n Avalanche Energy Ratings n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount SMD-2 * Current is limited by package n Light Weight Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 75* ID @ VGS = 10V, TC = 100°C Continuous Drain Current 75* IDM Pulsed Drain Current À 300 PD @ TC = 25°C Max. Power Dissipation 250 W Linear Derating Factor 2.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy Á 500 mJ IAR Avalanche Current À 75 A EAR Repetitive Avalanche Energy À 25 mJ dv/dt Peak Diode Recovery dv/dt  6.4 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Package Mounting Surface Temp. 300 (for 5s) Weight 3.3 (Typical) g oC A PD-94337C |
Nº de peça semelhante - IRF7NA2907_15 |
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Descrição semelhante - IRF7NA2907_15 |
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