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IRFB3407ZPBF Folha de dados(PDF) 1 Page - International Rectifier

Nome de Peças IRFB3407ZPBF
Descrição Electrónicos  Battery Management
Download  8 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFB3407ZPBF Folha de dados(HTML) 1 Page - International Rectifier

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Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
Applications
l Battery Management
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
GD
S
Gate
Drain
Source
S
D
G
TO-220AB
IRFB3407ZPbF
D
S
D
G
VDSS
75V
RDS(on) typ.
5.0m
Ω
max.
6.4m
Ω
ID (Silicon Limited)
122Ac
ID (Package Limited)
120A
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
Ãd
A
EAR
Repetitive Avalanche Energy
d
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case j
–––
0.65
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
°C/W
RθJA
Junction-to-Ambient, TO-220
–––
62
See Fig. 14, 15, 21a, 21b
140
230
6.7
-55 to + 175
± 20
1.5
10lbf
xin (1.1Nxm)
Max.
122
™
86
488
120
°C
A
300
IRFB3407ZPbF
1 www.irf.com
© 2013 International Rectifier
March 15, 2013
Ordering Information
Form
Quantity
IRFB3407ZPbF
TO-220
Tube
50
IRFB3407ZPbF
Base part number
Package Type
Standard Pack
Complete Part Number


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