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2SA1116 Folha de dados(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1116 Folha de dados(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1116 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -200 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V 30 fT Transition frequency IC=-0.5A ; VCE=-12V 20 MHz Switching times resistive load tr Rise time 0.3 μs ts Storage time 0.9 μs tf Fall time IC=-5.0A IB1=-IB2=-0.5A RL=12Ω;VCC=-60V 0.2 μs |
Nº de peça semelhante - 2SA1116_15 |
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Descrição semelhante - 2SA1116_15 |
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