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CSD17578Q3A Folha de dados(PDF) 5 Page - Texas Instruments

Nome de Peças CSD17578Q3A
Descrição Electrónicos  CSD17578Q3A 30 V N-Channel NexFET Power MOSFETs
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

CSD17578Q3A Folha de dados(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100
125
150
175
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
D006
VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
D007
TC = 25°C, I D = 10 A
TC = 125°C, I D = 10 A
Qg - Gate Charge (nC)
0
2
4
6
8
10
12
14
16
18
0
1
2
3
4
5
6
7
8
9
10
D004
VDS - Drain-to-Source Voltage (V)
0
3
6
9
12
15
18
21
24
27
30
10
100
1000
10000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
VDS - Drain-to-Source Voltage (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
10
20
30
40
50
60
70
80
90
100
D002
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
VGS - Gate-to-Source Voltage (V)
0
0.5
1
1.5
2
2.5
3
3.5
4
0
10
20
30
40
50
60
70
80
90
100
D003
TC = 125°C
TC = 25°C
TC = -55°C
CSD17578Q3A
www.ti.com
SLPS525 – SEPTEMBER 2014
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
VDS = 5 V
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
ID = 10 A
VDS = 15 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
Copyright © 2014, Texas Instruments Incorporated
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