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CSD25484F4 Folha de dados(PDF) 5 Page - Texas Instruments

Nome de Peças CSD25484F4
Descrição Electrónicos  CSD25484F4 ??0 V P-Channel FemtoFET MOSFET
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Fabricante Electrônico  TI [Texas Instruments]
Página de início  http://www.ti.com
Logo TI - Texas Instruments

CSD25484F4 Folha de dados(HTML) 5 Page - Texas Instruments

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TC - Case Temperature (GC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
D008
VGS = -2.5 V
VGS = -8.0 V
-VSD - Source-To-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
D009
TC = 25GC
TC = 125GC
TC - Case Temperature (GC)
-75
-50
-25
0
25
50
75
100
125
150
175
0.55
0.65
0.75
0.85
0.95
1.05
1.15
1.25
D006
-VGS - Gate-To-Source Voltage (V)
0
2
4
6
8
10
12
0
25
50
75
100
125
150
175
200
225
250
D007
TC = 25°C, I D = -0.5 A
TC = 125°C, I D = -0.5 A
Qg - Gate Charge (nC)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
1
2
3
4
5
6
7
8
D004
-VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
1
10
100
1000
5000
D005
Ciss = Cgd + Cgs
Coss = Cds + Cgd
Crss = Cgd
CSD25484F4
www.ti.com
SLPS551 – MAY 2015
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
ID = –0.5 A
VDS = –10 V
Figure 4. Gate Charge
Figure 5. Capacitance
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
Figure 7. On-State Resistance vs Gate-to-Source Voltage
ID = –0.5 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Copyright © 2015, Texas Instruments Incorporated
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