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BF1105 Folha de dados(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1105 Folha de dados(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
6 / 16 page 1997 Dec 02 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1105; BF1105R; BF1105WR Fig.9 Drain current as a function of drain-source voltage; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 024 8 fMGM248 6 16 8 12 4 0 ID (mA) VDS (V) Fig.10 Drain current as a function of gate 1 current; typical values. VDS = 5 V; VG2-S = 4 V; Tj =25 °C. handbook, halfpage −8 −6 −40 MGM249 −2 16 8 12 4 0 ID (mA) IG1 (µA) VDS = 5 V; VG2nom = 4 V; IDnom =Iself bias; fw = 50 MHz; funw = 60 MHz; Tamb =25 °C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). handbook, halfpage 0 204060 110 100 80 90 MGM250 gain reduction (dB) Vunw (dB µV) |
Nº de peça semelhante - BF1105_15 |
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Descrição semelhante - BF1105_15 |
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